Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
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A licensed attorney with nearly a decade of experience in content production, Valerie Catalano knows how to help readers digest complicated information about the law in an approachable way. Her ...
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